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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT11AF
DESCRIPTION *High Voltage *High Speed Switching
*
APPLICATIONS *Converters *Inverters *Switching regulators *Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range
VALUE 1000 450 9 5 10 2 4 40 150 -65~150
UNIT V V V A A A A W
IBM PC Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 3.125 UNIT K/W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0 IC= 2.5A; IB= 0.5A IC= 2.5A; IB= 0.5A VCE= 1000V ;VBE= 0 VEB= 9V; IC= 0 IC= 5mA ; VCE= 5V IC= 0.5A ; VCE= 5V 10 10 MIN 450
BUT11AF
TYP.
MAX
UNIT V
1.5 1.3 1.0 10 35 35
V V mA mA
Switching Times; Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 2.5A; IB1= -IB2= 0.5A VCC= 250V;RL= 100 1.0 4.0 0.8 s s s
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT11AF
isc Websitewww.iscsemi.cn


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